000			00738nam a2200205#a 4500
001			0000016326
008			211117s2020||||xx |||||||||||||| ||und||
020			_a0849335590
082			_a621.381528 SIL 2006
245		0	_aSilicon heterostructure handbook : materials, fabrication, devices, circuits, and applications of SiGe and Si strained-layer epitaxy _c/ edited by John D. Cressler..
260			_aBoca Raton _bCRC Taylor & Francis _c2006.
300			_a1v. (various pagings) _bill. _c26cm
365			_cMYR
500			_aIncludes index p.1211 - 1227
650			_aBipolar transistors _xHandbooks, manuals, etc.
650			_aSilicon _xHandbooks, manuals, etc.
700			_aCressler, John D.
942			_cBK-GN
999			_c15550 _d15550